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Synthesis and characterization of SnO2 nanowires on Si substrates in a thermal chemical vapor deposition process

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2007, 17(3), pp.91-94
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

이득희 1 SoonWook Jeong 1 KIM, SANG-WOO 2 박현규 1 이삼동 1

1금오공과대학교
2성균관대학교

Accredited

ABSTRACT

Single-crystalline SnO2 nanowires were successfully grown on Si(001) substrates via vapor-liquid-solid mechanismin a thermal chemical vapor deposition. Large quantity of SnO2 nanowires were synthesized at temperature ranges of 950~1000oC in Ar atmosphere. It was found that the grown SnO2crystalline by diffraction and transmision electron microscopy measurements. Broad emission located at about 600 nm fromthe grown nanowires was clearly observed in room temperature photoluminescence measurements, indicating that theemission band originated from defect level transition into SnO2 nanowires.Key words SnO2, Nanowire, CVD, VLS, Catalyst, Single crystalline, Tetragonal structure, Photoluminescence, Free exciton,Defect level, Sensors......... ... Si .. .. SnO2 ..... .. . ....

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