@article{ART001092360},
author={Kwang Joon Hong and Park,Chang-Sun},
title={Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={5},
pages={179-186}
TY - JOUR
AU - Kwang Joon Hong
AU - Park,Chang-Sun
TI - Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 179
EP - 186
SN - 1225-1429
AB - Single crystal CdGa2Se4 layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at
420oC with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of CdGa2Se4 at 630oC. The
crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray
diffraction (DCXD). The carrier density and mobility of single crystal CdGa2Se4 thin films measured with Hall effect by
van der Pauw method are 8.27 × 1017 cm.3, 345 cm2/V·s at 293 K, respectively. The photocurrent and the absorption spectra
of CdGa2Se4/SI (Semi-Insulated) GaAs (100) are measured ranging from 293 K to 10 K. The temperature dependence of the
energy band gap of the CdGa2Se4 obtained from the absorption spectra was well described by the Varshni’s relation,
Eg(T) = 2.6400 eV . (7.721 × 10.4 eV/K)T2/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model,
the crystal field energy (Δcr) and the spin-orbit splitting energy (Δso) for the valence band of the CdGa2Se4 have been
estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are
ascribed to the A1-, B1-, and C11-exciton peaks.Iat
KW - CdGa2Se4;Energy band gap;Photocurrent spectrum;Crystal field splitting energy;Spin-orbit splitting energy
DO -
UR -
ER -
Kwang Joon Hong and Park,Chang-Sun. (2007). Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 17(5), 179-186.
Kwang Joon Hong and Park,Chang-Sun. 2007, "Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.5 pp.179-186.
Kwang Joon Hong, Park,Chang-Sun "Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 17.5 pp.179-186 (2007) : 179.
Kwang Joon Hong, Park,Chang-Sun. Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy. 2007; 17(5), 179-186.
Kwang Joon Hong and Park,Chang-Sun. "Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 17, no.5 (2007) : 179-186.
Kwang Joon Hong; Park,Chang-Sun. Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 17(5), 179-186.
Kwang Joon Hong; Park,Chang-Sun. Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(5) 179-186.
Kwang Joon Hong, Park,Chang-Sun. Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy. 2007; 17(5), 179-186.
Kwang Joon Hong and Park,Chang-Sun. "Photocurrent study on the splitting of the valence band and growth of CdGa2Se4 single crystalthin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 17, no.5 (2007) : 179-186.
