@article{ART001092566},
author={김영웅 and In-Sung Park and Duckkyun Choi and Youngbae Kim},
title={High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={5},
pages={187-191}
TY - JOUR
AU - 김영웅
AU - In-Sung Park
AU - Duckkyun Choi
AU - Youngbae Kim
TI - High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 187
EP - 191
SN - 1225-1429
AB - The device performance of ZnO-thin film transistors (ZnO-TFTs) with gate dielectrics of SiO2, SiNx and Polyvinylphenol
(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance
with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing
processes. The field effect mobility and on/off ratio of ZnO-TFTs with SiNx were 20.2 cm
2
V.1
s.1
and 5 × 10
6
, respectively,
which is higher than those previously reported. The device adoptable values of the mobility of 1.37 cm
2
V.1
s.1
and the on/
off ratio of 6 × 10
3
were evaluated from the device with organic PVP dielectric.
KW - ZnO;ZnO-TFTs;Gate dielectrics;Field effect mobility;On/off ratio;Organic insulatora
DO -
UR -
ER -
김영웅, In-Sung Park, Duckkyun Choi and Youngbae Kim. (2007). High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics. Journal of the Korean Crystal Growth and Crystal Technology, 17(5), 187-191.
김영웅, In-Sung Park, Duckkyun Choi and Youngbae Kim. 2007, "High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.5 pp.187-191.
김영웅, In-Sung Park, Duckkyun Choi, Youngbae Kim "High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics" Journal of the Korean Crystal Growth and Crystal Technology 17.5 pp.187-191 (2007) : 187.
김영웅, In-Sung Park, Duckkyun Choi, Youngbae Kim. High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics. 2007; 17(5), 187-191.
김영웅, In-Sung Park, Duckkyun Choi and Youngbae Kim. "High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics" Journal of the Korean Crystal Growth and Crystal Technology 17, no.5 (2007) : 187-191.
김영웅; In-Sung Park; Duckkyun Choi; Youngbae Kim. High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics. Journal of the Korean Crystal Growth and Crystal Technology, 17(5), 187-191.
김영웅; In-Sung Park; Duckkyun Choi; Youngbae Kim. High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(5) 187-191.
김영웅, In-Sung Park, Duckkyun Choi, Youngbae Kim. High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics. 2007; 17(5), 187-191.
김영웅, In-Sung Park, Duckkyun Choi and Youngbae Kim. "High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics" Journal of the Korean Crystal Growth and Crystal Technology 17, no.5 (2007) : 187-191.
