@article{ART001092567},
author={이성호 and Yong-Chae Chung},
title={Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={5},
pages={192-195}
TY - JOUR
AU - 이성호
AU - Yong-Chae Chung
TI - Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 192
EP - 195
SN - 1225-1429
AB -
KW - ab initio;GaN;Nitrogen vacancy;Oxygen;Γ pointage/pj
DO -
UR -
ER -
이성호 and Yong-Chae Chung. (2007). Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations. Journal of the Korean Crystal Growth and Crystal Technology, 17(5), 192-195.
이성호 and Yong-Chae Chung. 2007, "Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.5 pp.192-195.
이성호, Yong-Chae Chung "Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations" Journal of the Korean Crystal Growth and Crystal Technology 17.5 pp.192-195 (2007) : 192.
이성호, Yong-Chae Chung. Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations. 2007; 17(5), 192-195.
이성호 and Yong-Chae Chung. "Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations" Journal of the Korean Crystal Growth and Crystal Technology 17, no.5 (2007) : 192-195.
이성호; Yong-Chae Chung. Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations. Journal of the Korean Crystal Growth and Crystal Technology, 17(5), 192-195.
이성호; Yong-Chae Chung. Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(5) 192-195.
이성호, Yong-Chae Chung. Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations. 2007; 17(5), 192-195.
이성호 and Yong-Chae Chung. "Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations" Journal of the Korean Crystal Growth and Crystal Technology 17, no.5 (2007) : 192-195.
