Crystal growth of BT-based ferroelectric films for nonvolatile memories

BeeLyong Yang (양비룡)

Crystal growth of BT-based ferroelectric films for nonvolatile memories

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2004, 14(4), pp.151-154
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

BeeLyong Yang ¹

¹금오공과대학교

Accredited

ABSTRACT

Issues of ferroelectric high-density memories (> 64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than 0.1 um2 and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

KEYWORDS

Ferroelectric, BLT, Orientation, Nanoscale, Nucleation

Citation status

* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19