Structural, electrical and optical properties of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Hyungduk Ko (고형덕); Jae Seok Lee (이재석); Young-Sung Kim (김용성); Su-Jeong Suh (서수정); Choong-Sun Lee (이충선); Ki-Chul Kim (김기철); Weon-Pil Tai (태원필)

Structural, electrical and optical properties of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2004, 14(4), pp.145-150
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : June 4, 2004
Accepted : July 29, 2004

Hyungduk Ko ¹, Jae Seok Lee ², Young-Sung Kim ³, Su-Jeong Suh ¹, Choong-Sun Lee ¹, Ki-Chul Kim ⁴, Weon-Pil Tai ⁵

¹성균관대학교
²고려대학교
³서울과학기술대학교
⁴한국전자통신연구원
⁵인하대학교

Accredited

ABSTRACT

We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of 400oC was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited 7.40?0-4 W-cm. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85~90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.

KEYWORDS

Pulsed DC magnetron sputter, Al-doped ZnO, Pulse frequency, Substrate temperature, Optical properties

Citation status

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