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Hot-wall epitaxial growth and characteristic of CdTe films

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2004, 14(4), pp.140-144
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : June 2, 2004
  • Accepted : August 9, 2004

Park, Hyo-Yeol 1 Jaehyuk Jo 2 Gwangsoo Jeen 2 YoungHun Hwang 1

1울산과학대학교
2부산대학교

Accredited

ABSTRACT

CdTe thin films were grown on GaAs (100) substrates by hot wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100) film was grown as a single crystals with the different from growth plane of (111), and growth rate of CdTe thin films was found to be 30 ?sec by SEM. To acquire a high quality CdTe thin film, the optimum temperature for the source and substrate are found to be 500oC and 320oC, respectively, which was checked by PL.

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