Growth and effect of thermal annealing for AgGaSe2 single crystal thin film by not wall epitaxy (Hot wall epitaxy(HWE)법에 의한 AgGaSe2 단결정 박막 성장과 열처리 효과)

Baek,Seung-Nam (백승남); Kwang Joon Hong (홍광준); 김장복

Growth and effect of thermal annealing for AgGaSe2 single crystal thin film by not wall epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2006, 16(5), pp.189-197
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Baek,Seung-Nam ¹, Kwang Joon Hong ¹, 김장복 ¹

¹조선대학교

Accredited

ABSTRACT

A stoichiometric mixture of evaporating materials for AgGaSe2 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 630oC and 420oC, respectively. The temperature dependence of the energy band gap of the AgGaSe2 obtained from the absorption spectra was well described by the Varshni뭩 relation, Eg(T) = 1.9501 eV - (8.79 ?10-4 eV/K)T2/(T + 250 K). After the as-grown AgGaSe2 single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of AgGaSe2 single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of VAg, VSe, Agint, and Seint obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaSe2 single crystal thin films to an optical p-type. Also, we confirmed that Ga in AgGaSe2/GaAs did not form the native defects because Ga in AgGaSe2 single crystal thin films existed in the form of stable bonds.

KEYWORDS

Point defect, Hot wall epitaxy, Single crystal thin film, Thermal annealing, Photoluminescence Point defect, Hot wall epitaxy, Single crystal thin film, Thermal annealing, Photoluminescence

Citation status

* References for papers published after 2023 are currently being built.

[journal] Wagner / 1974 / ？Study of the band edge in AgGaSe2 by photovoltaic effect? Appl

[journal] I / 1984 / ？Transport properties of AgGaSe2 single crystal? J

[journal] Shay / 1975 / ？Heterojunction formation in PbS/AgGaSe2 ternary solar cells? J

[journal] I / 1984 / ？Photoluminescience and phconductivity measurements on AgGaSe2? J

[journal] Hanna / 1973 / ？Saturation Photoconductivity in AgGaSe2? Opt

[journal] Jantz / 1977 / ？Optical absorption of Co-doped AgGaSe2? Appl

[journal] Tell / 1972 / ？The optical properties of AgGaS2 crystal grown by the sublimation method? Phys

[journal] K.J. Hong / 2004 / Point defect study from low photoluminescience of the CdIn2S4 films grown by hot wall epitaxy method? 271

[journal] B.D. Cullity / 1985 / Elements of X-ray Diffractions chap

[journal] Han / 1974 / ？The optical properties of AgGaSe2 thin films? J

[journal] Fujita / 1965 / ？Electron radition damage in cadium-selenide crystal at liquid-helium temperrature? J

[journal] / 1967 / ？Far-infrared optical absorption of Fe2+ in ZnSe? Physica 34

[journal] Boy / 1971 / ？Luminescence and impurity states in AgGaS2? J

[journal] Tell / 1971 / ？Influence of the annealing conductions on the properties of AgGaSe2 thin films? Phys

[journal] A / 1971 / ？The band structure of AgGaSe2 calculated by the pseudopotential method? J

[journal] Staff / 1974 / ？The optical properties of AgGaSe2 single crystal? J

[journal] A / 1987 / ？Growth by directional freezing of AgGaSe2 and diffused homojunctions in bulk material? J

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19