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The formation of diamond films on high speed steel with a titanium interlayer by electron-assisted CVD process

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2004, 14(1), pp.6-11
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

정연진 1 이건영 1 이호진 1 Choe Jean Il 1

1단국대학교

Accredited

ABSTRACT

The characteristics of interface layer and the effect of bias voltages on the nucleation density and hetroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of 700oC. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.

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