2004, Vol.14, No.1

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

pISSN : 1225-1429 / eISSN : 2234-5078
https://journal.kci.go.kr/jkcgct

Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

The characteristics of interface layer and the effect of bias voltages on the nucleation density and hetroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of 700oC. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.

Abstract In this study, we have investigated the development of the crystal growth stability and reproducibility for large and high-quality DAST. DAST crystal were grown from a saturated methanol solution by a slow cooling method and DAST was synthesized by the condensation of 4-methyl-n-methyl pyridinum tosylate, which was prepared from 4-pocoline and methyl toluenesulponate and 4-N-dimethyl amino-bezaldehyde in the presence of piperidine. We had synthesized DAST crystals in dry Argon atmosphere in order to avoid the formation of hydride organge co-crystals, DAST·H2O. Since DAST molecules crystallize in a humid atmosphere, crystal structure become centrosymmetric, and then second order NLO (nonlinear optical) properties would be disappeared. We fixed the growth orientation of DAST crystal (001) surface. The crystal growth was proceeded at a cooling rate of 1oC/day and the cooling period is for 4 days. The dimensions of seed crystal was 2.5×3.6×0.4 mm3 and we have obtained a DAST crystal with the dimension of 10×10.5×3.0 mm3. The color of grown DAST crystal is red and it’s surface appears to be metallic green.