Bonding structure of the DLC films deposited by RF-PECVD (RF-PECVD법에 의해 증착된 DLC 박막의 결합 특성)

Bonggeun Choi (최봉근); 신재혁; 안종일; Kwang Bo Shim (심광보)

Bonding structure of the DLC films deposited by RF-PECVD

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2004, 14(1), pp.27-32
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Bonggeun Choi ¹, 신재혁 ², 안종일 ², Kwang Bo Shim ¹

¹한양대학교
²기술표준원

Accredited

ABSTRACT

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

KEYWORDS

Amorphous GaN, Photoluminescence, Pulsed-laser ablation, Gas pressure, Laser energy

Citation status

* References for papers published after 2023 are currently being built.

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