@article{ART001112465},
author={Seung Hwan Shim and Jong-Won Yoon and Naoto koshizaki and Kwang Bo Shim},
title={Growth and characterization of amorphous GaN film using a pulsed-laser ablation},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2004},
volume={14},
number={1},
pages={33-36}
TY - JOUR
AU - Seung Hwan Shim
AU - Jong-Won Yoon
AU - Naoto koshizaki
AU - Kwang Bo Shim
TI - Growth and characterization of amorphous GaN film using a pulsed-laser ablation
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2004
VL - 14
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 33
EP - 36
SN - 1225-1429
AB - Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the
surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the
film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the
film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at
relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room
temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.
KW - Amorphous GaN;Photoluminescence;Pulsed-laser ablation;Gas pressure;Laser energy
DO -
UR -
ER -
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki and Kwang Bo Shim. (2004). Growth and characterization of amorphous GaN film using a pulsed-laser ablation. Journal of the Korean Crystal Growth and Crystal Technology, 14(1), 33-36.
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki and Kwang Bo Shim. 2004, "Growth and characterization of amorphous GaN film using a pulsed-laser ablation", Journal of the Korean Crystal Growth and Crystal Technology, vol.14, no.1 pp.33-36.
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki, Kwang Bo Shim "Growth and characterization of amorphous GaN film using a pulsed-laser ablation" Journal of the Korean Crystal Growth and Crystal Technology 14.1 pp.33-36 (2004) : 33.
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki, Kwang Bo Shim. Growth and characterization of amorphous GaN film using a pulsed-laser ablation. 2004; 14(1), 33-36.
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki and Kwang Bo Shim. "Growth and characterization of amorphous GaN film using a pulsed-laser ablation" Journal of the Korean Crystal Growth and Crystal Technology 14, no.1 (2004) : 33-36.
Seung Hwan Shim; Jong-Won Yoon; Naoto koshizaki; Kwang Bo Shim. Growth and characterization of amorphous GaN film using a pulsed-laser ablation. Journal of the Korean Crystal Growth and Crystal Technology, 14(1), 33-36.
Seung Hwan Shim; Jong-Won Yoon; Naoto koshizaki; Kwang Bo Shim. Growth and characterization of amorphous GaN film using a pulsed-laser ablation. Journal of the Korean Crystal Growth and Crystal Technology. 2004; 14(1) 33-36.
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki, Kwang Bo Shim. Growth and characterization of amorphous GaN film using a pulsed-laser ablation. 2004; 14(1), 33-36.
Seung Hwan Shim, Jong-Won Yoon, Naoto koshizaki and Kwang Bo Shim. "Growth and characterization of amorphous GaN film using a pulsed-laser ablation" Journal of the Korean Crystal Growth and Crystal Technology 14, no.1 (2004) : 33-36.
