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@article{ART001245907},
author={신동익 and YOON, DAEHO and Hojune Lee and 강삼묵},
title={Distance between source and substrate and growth mode control in GaN nanowires synthesis},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={1},
pages={10-14}

TY - JOUR
AU - 신동익
AU - YOON, DAEHO
AU - Hojune Lee
AU - 강삼묵
TI - Distance between source and substrate and growth mode control in GaN nanowires synthesis
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 10
EP - 14
SN - 1225-1429
AB - We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of 950℃. The Ar and NH3 flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.
KW - GaN nanowires;Vapor phase epitaxy method;Atmospheric pressure growth;Synthesis mechanism
DO -
UR -
ER -

신동익, YOON, DAEHO, Hojune Lee and 강삼묵. (2008). Distance between source and substrate and growth mode control in GaN nanowires synthesis. Journal of the Korean Crystal Growth and Crystal Technology, 18(1), 10-14.

신동익, YOON, DAEHO, Hojune Lee and 강삼묵. 2008, "Distance between source and substrate and growth mode control in GaN nanowires synthesis", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.1 pp.10-14.

신동익, YOON, DAEHO, Hojune Lee, 강삼묵 "Distance between source and substrate and growth mode control in GaN nanowires synthesis" Journal of the Korean Crystal Growth and Crystal Technology 18.1 pp.10-14 (2008) : 10.

신동익, YOON, DAEHO, Hojune Lee, 강삼묵. Distance between source and substrate and growth mode control in GaN nanowires synthesis. 2008; 18(1), 10-14.

신동익, YOON, DAEHO, Hojune Lee and 강삼묵. "Distance between source and substrate and growth mode control in GaN nanowires synthesis" Journal of the Korean Crystal Growth and Crystal Technology 18, no.1 (2008) : 10-14.

신동익; YOON, DAEHO; Hojune Lee; 강삼묵. Distance between source and substrate and growth mode control in GaN nanowires synthesis. Journal of the Korean Crystal Growth and Crystal Technology, 18(1), 10-14.

신동익; YOON, DAEHO; Hojune Lee; 강삼묵. Distance between source and substrate and growth mode control in GaN nanowires synthesis. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(1) 10-14.

신동익, YOON, DAEHO, Hojune Lee, 강삼묵. Distance between source and substrate and growth mode control in GaN nanowires synthesis. 2008; 18(1), 10-14.

신동익, YOON, DAEHO, Hojune Lee and 강삼묵. "Distance between source and substrate and growth mode control in GaN nanowires synthesis" Journal of the Korean Crystal Growth and Crystal Technology 18, no.1 (2008) : 10-14.