@article{ART001245918},
author={서중원 and Sang-Jin Moon and Jung-Hoon Hwang and KIM, YOUN-JEA and WonWook So and YOON, DAEHO},
title={Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={1},
pages={45-49}
TY - JOUR
AU - 서중원
AU - Sang-Jin Moon
AU - Jung-Hoon Hwang
AU - KIM, YOUN-JEA
AU - WonWook So
AU - YOON, DAEHO
TI - Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 45
EP - 49
SN - 1225-1429
AB - The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of
the photovoltaic industry. Polycrystalline Si wafers shares more than 60 % of the photovoltaic market due to its cost
advantage compared to monocrystalline silicon wafers. Several solidification processes have been developed by industry
including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional
solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of
the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is
applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed
efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.
KW - Photovoltaic;Advanced directional solidification;Large sized polycrystalline Si ingot;Numerical simulation
DO -
UR -
ER -
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So and YOON, DAEHO. (2008). Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth. Journal of the Korean Crystal Growth and Crystal Technology, 18(1), 45-49.
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So and YOON, DAEHO. 2008, "Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.1 pp.45-49.
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So, YOON, DAEHO "Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth" Journal of the Korean Crystal Growth and Crystal Technology 18.1 pp.45-49 (2008) : 45.
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So, YOON, DAEHO. Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth. 2008; 18(1), 45-49.
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So and YOON, DAEHO. "Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth" Journal of the Korean Crystal Growth and Crystal Technology 18, no.1 (2008) : 45-49.
서중원; Sang-Jin Moon; Jung-Hoon Hwang; KIM, YOUN-JEA; WonWook So; YOON, DAEHO. Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth. Journal of the Korean Crystal Growth and Crystal Technology, 18(1), 45-49.
서중원; Sang-Jin Moon; Jung-Hoon Hwang; KIM, YOUN-JEA; WonWook So; YOON, DAEHO. Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(1) 45-49.
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So, YOON, DAEHO. Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth. 2008; 18(1), 45-49.
서중원, Sang-Jin Moon, Jung-Hoon Hwang, KIM, YOUN-JEA, WonWook So and YOON, DAEHO. "Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth" Journal of the Korean Crystal Growth and Crystal Technology 18, no.1 (2008) : 45-49.
