Characteristics of Al-doped ZnO thin films prepared by sol-gel method (Characteristics of Al-doped ZnO thin films prepared by sol-gel method )

김용남; 이승수; 송준광; 노태민; 김정우; Lee, Hee-Soo (이희수)

Characteristics of Al-doped ZnO thin films prepared by sol-gel method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2008, 18(1), pp.50-55
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

김용남 ¹, 이승수 ¹, 송준광 ¹, 노태민 ², 김정우 ², Lee, Hee-Soo ²

¹한국산업기술시험원
²부산대학교

Accredited

ABSTRACT

Al-doped ZnO(AZO) thin films have been fabricated on glass substrate by sol-gel method, and the effect of Al precursors and post-annealing temperature on the characteristics of AZO thin films was investigated. The sol was prepared with zinc acetate, EtOH, MEA and Al recursors. In order to dope Al in ZnO, two types of aluminum nitrate and aluminum chloride were used as Al precursor. Zinc concentration was 0.5 mol/l and the content of Al precursor was 1 at% of Zn in the sol. The sol was spin-coated on glass substrate, and the coated films were annealed at 550℃ for 2 h and were post-annealed at temperature ranges of 300~500℃ for 2 h in reducing atmosphere (N₂/H₂ = 9/1). Structural, electrical and optical propertis of the fabricated AZO thin films were analyzed by XRD, FE-SEM, AFM, hall effect measurement system and UV-visible spectroscopy. Optical and electrical properties of AZO thin films prepared with aluminum nitrate as Al precursor were better than those of films prepared with aluminum chloride. The electrical resistivity and the optical transmittance of films decreased with increasing post-annealing temperatures. The minimum electrical resistivity of 2 × 10−3 Ω·cm and the maximum

KEYWORDS

Al-doped ZnO, Sol-gel, Spin-coating, Al precursor, Post-annealing temperature, Resistivity, Transmittance

Citation status

* References for papers published after 2023 are currently being built.

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