@article{ART001263776},
author={오동근 and Bonggeun Choi and Kwang Bo Shim and Sung Yi and 정진현 and 이성국 and Van Thi Ha Lai},
title={Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={3},
pages={97-100}
TY - JOUR
AU - 오동근
AU - Bonggeun Choi
AU - Kwang Bo Shim
AU - Sung Yi
AU - 정진현
AU - 이성국
AU - Van Thi Ha Lai
TI - Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 97
EP - 100
SN - 1225-1429
AB - Polar and non-polar GaN was grown by the HVPE on various substrates and influence of polarity has been
investigated. The 10 μm thickness GaN were grown by HVPE is along A-plane (1120), C-plane (0001) and M-Plane
(1010) sapphire substrate respectively. Surface properties were observed by optical microscope and atomic force microscopy.
High resolution X-ray diffraction (HR-XRD) confirms the wurtzite structure. The donor band exciton peak located at
~3.4 eV and also located yellow luminescence peak at 2.2 eV. The polarity of the GaN film has a strong influence on the
morphology and the optical properties.
KW - GaN;Thin film;Polarity;HVPE;Wurtzite structure
DO -
UR -
ER -
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국 and Van Thi Ha Lai. (2008). Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique. Journal of the Korean Crystal Growth and Crystal Technology, 18(3), 97-100.
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국 and Van Thi Ha Lai. 2008, "Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.3 pp.97-100.
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국, Van Thi Ha Lai "Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique" Journal of the Korean Crystal Growth and Crystal Technology 18.3 pp.97-100 (2008) : 97.
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국, Van Thi Ha Lai. Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique. 2008; 18(3), 97-100.
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국 and Van Thi Ha Lai. "Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique" Journal of the Korean Crystal Growth and Crystal Technology 18, no.3 (2008) : 97-100.
오동근; Bonggeun Choi; Kwang Bo Shim; Sung Yi; 정진현; 이성국; Van Thi Ha Lai. Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique. Journal of the Korean Crystal Growth and Crystal Technology, 18(3), 97-100.
오동근; Bonggeun Choi; Kwang Bo Shim; Sung Yi; 정진현; 이성국; Van Thi Ha Lai. Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(3) 97-100.
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국, Van Thi Ha Lai. Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique. 2008; 18(3), 97-100.
오동근, Bonggeun Choi, Kwang Bo Shim, Sung Yi, 정진현, 이성국 and Van Thi Ha Lai. "Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique" Journal of the Korean Crystal Growth and Crystal Technology 18, no.3 (2008) : 97-100.
