@article{ART001263775},
author={Van Thi Ha Lai and Kwang Bo Shim and Bonggeun Choi and 정진현 and 오동근 and 은종원 and Lim， Ji Hoon and 박지은 and 이성국 and Sung Yi},
title={Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={3},
pages={101-104}
TY - JOUR
AU - Van Thi Ha Lai
AU - Kwang Bo Shim
AU - Bonggeun Choi
AU - 정진현
AU - 오동근
AU - 은종원
AU - Lim， Ji Hoon
AU - 박지은
AU - 이성국
AU - Sung Yi
TI - Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 101
EP - 104
SN - 1225-1429
AB - GaN films were grown on the vertical and horizontal reactors by the hydride vapour phase epitaxy (HVPE). The structural and optical characteristics of the GaN films were investigated depending on the reactor-type. GaN epilayers were characterized by double crystal X-ray diffraction (DC-XRD), transmission electron microscopy (TEM) and photoluminescence (PL). Surface defects of two kinds of the GaN films were revealed by the wet chemical etching
method, using H₃PO₄ acid at 200℃ for 8 minutes. Hexagonal etch pits were analyzed by optical microscopy and SEM. Etch pit densities were calculated to be approximately 1.4×10
7 and 1.2×106cm-² for GaN layers grown on horizontal and vertical reactors, respectively. Those results show GaN grown in the vertical reactor having a better quality of optical
properties and crystallinity than that in the horizontal reactor.
KW - Gallium nitride;Hydride vapor phase epitaxy;Photoluminescence
DO -
UR -
ER -
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국 and Sung Yi. (2008). Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth. Journal of the Korean Crystal Growth and Crystal Technology, 18(3), 101-104.
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국 and Sung Yi. 2008, "Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.3 pp.101-104.
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국, Sung Yi "Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth" Journal of the Korean Crystal Growth and Crystal Technology 18.3 pp.101-104 (2008) : 101.
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국, Sung Yi. Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth. 2008; 18(3), 101-104.
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국 and Sung Yi. "Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth" Journal of the Korean Crystal Growth and Crystal Technology 18, no.3 (2008) : 101-104.
Van Thi Ha Lai; Kwang Bo Shim; Bonggeun Choi; 정진현; 오동근; 은종원; Lim， Ji Hoon; 박지은; 이성국; Sung Yi. Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth. Journal of the Korean Crystal Growth and Crystal Technology, 18(3), 101-104.
Van Thi Ha Lai; Kwang Bo Shim; Bonggeun Choi; 정진현; 오동근; 은종원; Lim， Ji Hoon; 박지은; 이성국; Sung Yi. Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(3) 101-104.
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국, Sung Yi. Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth. 2008; 18(3), 101-104.
Van Thi Ha Lai, Kwang Bo Shim, Bonggeun Choi, 정진현, 오동근, 은종원, Lim， Ji Hoon, 박지은, 이성국 and Sung Yi. "Characterization of GaN thick layer grown by the HVPE: Comparison of horizontal with vertical growth" Journal of the Korean Crystal Growth and Crystal Technology 18, no.3 (2008) : 101-104.
