Control of axial segregation by the modification of crucible geometry

Kyoung-Hee Lee (이경희)

Control of axial segregation by the modification of crucible geometry

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2008, 18(5), pp.191-194
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Kyoung-Hee Lee ¹

¹동양미래대학

Accredited

ABSTRACT

We will focus on the horizontal Bridgman growth system to analyze the transport phenomena numerically, because the simple furnace system and the confined growth environment allow for the precise understanding of the transport phenomena in solidification process. In conventional melt growth process, the dopant concentration tends to vary significantly along the crystal. In this work, we propose the modification of crucible geometry for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution. Numerical analysis has been performed to study the transport phenomena of dopant impurities in conventional and proposed Bridgman silicon growth using the finite element method and implicit Euler time integration. It has been demonstrated using mathematical models and by numerical analysis that proposed method is useful for obtaining crystals with superior uniformity along the growth direction at a lower cost than can be obtained by the conventional melt growth process.

KEYWORDS

Segregation, Bridgman, Silicon, Dopant, Simulation

Citation status

* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19