@article{ART001287616},
author={정광필 and KIM YOUNG KWAN},
title={Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={5},
pages={195-199}
TY - JOUR
AU - 정광필
AU - KIM YOUNG KWAN
TI - Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 195
EP - 199
SN - 1225-1429
AB - Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell
industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell
industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5~6 N in purity.
However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition
profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from
p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon
ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the
amount of the metal impurities but not effective in reducing the amount of dopants.
KW - UMG (Upgraded Metallurgical Grade) silicon;Segregation coefficient;Multi-crystalline silicon;Type change;Solidification rate
DO -
UR -
ER -
정광필 and KIM YOUNG KWAN. (2008). Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon. Journal of the Korean Crystal Growth and Crystal Technology, 18(5), 195-199.
정광필 and KIM YOUNG KWAN. 2008, "Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.5 pp.195-199.
정광필, KIM YOUNG KWAN "Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon" Journal of the Korean Crystal Growth and Crystal Technology 18.5 pp.195-199 (2008) : 195.
정광필, KIM YOUNG KWAN. Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon. 2008; 18(5), 195-199.
정광필 and KIM YOUNG KWAN. "Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon" Journal of the Korean Crystal Growth and Crystal Technology 18, no.5 (2008) : 195-199.
정광필; KIM YOUNG KWAN. Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon. Journal of the Korean Crystal Growth and Crystal Technology, 18(5), 195-199.
정광필; KIM YOUNG KWAN. Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(5) 195-199.
정광필, KIM YOUNG KWAN. Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon. 2008; 18(5), 195-199.
정광필 and KIM YOUNG KWAN. "Estimation of the impurity segregation in the multi-crystalline silicon ingot grown with UMG (Upgraded Metallurgical Grade) silicon" Journal of the Korean Crystal Growth and Crystal Technology 18, no.5 (2008) : 195-199.
