@article{ART001300165},
author={Jeong-Gil Choi and Kyong-Hwan Lee and Geug Tae Kim},
title={Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={6},
pages={225-231}
TY - JOUR
AU - Jeong-Gil Choi
AU - Kyong-Hwan Lee
AU - Geug Tae Kim
TI - Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 225
EP - 231
SN - 1225-1429
AB - For an aspect ratio (transport length-to-width) of 5, Pr = 1.13, Le = 1.91, Pe = 4.3, Cv = 1.01, PB = 20 Torr, the effects of addition of inert gas Ne on thermally buoyancy-driven convection (Gr = 2.44 × 10³) are numerically investigated
for further understanding and insight into essence of transport phenomena in two dimensional horizontal enclosures. For 10 K ≤ ΔT ≤ 50 K, the crystal growth rate increases from 10 K up to 20 K, and then is slowly decreased until ΔT = 50K, which is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. The dimensional maximum velocity gratitude reflecting the intensity of thermal convection is directly and linearly proportional to the temperature difference between the source and crystal regions. The rate is first order-exponentially decreased for 2 ≤ Ar ≤ 5. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. In addition, the rate is first order exponentially decayed for 10 ≤ PB
≤ 200 Torr.
KW - Mercurous chloride;Thermally buoyancy-driven convection;Neon and physical vapor transport
DO -
UR -
ER -
Jeong-Gil Choi, Kyong-Hwan Lee and Geug Tae Kim. (2008). Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport. Journal of the Korean Crystal Growth and Crystal Technology, 18(6), 225-231.
Jeong-Gil Choi, Kyong-Hwan Lee and Geug Tae Kim. 2008, "Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.6 pp.225-231.
Jeong-Gil Choi, Kyong-Hwan Lee, Geug Tae Kim "Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport" Journal of the Korean Crystal Growth and Crystal Technology 18.6 pp.225-231 (2008) : 225.
Jeong-Gil Choi, Kyong-Hwan Lee, Geug Tae Kim. Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport. 2008; 18(6), 225-231.
Jeong-Gil Choi, Kyong-Hwan Lee and Geug Tae Kim. "Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport" Journal of the Korean Crystal Growth and Crystal Technology 18, no.6 (2008) : 225-231.
Jeong-Gil Choi; Kyong-Hwan Lee; Geug Tae Kim. Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport. Journal of the Korean Crystal Growth and Crystal Technology, 18(6), 225-231.
Jeong-Gil Choi; Kyong-Hwan Lee; Geug Tae Kim. Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(6) 225-231.
Jeong-Gil Choi, Kyong-Hwan Lee, Geug Tae Kim. Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport. 2008; 18(6), 225-231.
Jeong-Gil Choi, Kyong-Hwan Lee and Geug Tae Kim. "Effects of inert gas (Ne) on thermal convection of mercurous chloride system of Hg₂Cl₂ and Ne during physical vapor transport" Journal of the Korean Crystal Growth and Crystal Technology 18, no.6 (2008) : 225-231.