@article{ART001300173},
author={음정현 and 장효식 and Hyung Tae Kim and Kyoon Choi},
title={Silicon purification through acid leaching and unidirectional solidification},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={6},
pages={232-236}
TY - JOUR
AU - 음정현
AU - 장효식
AU - Hyung Tae Kim
AU - Kyoon Choi
TI - Silicon purification through acid leaching and unidirectional solidification
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 232
EP - 236
SN - 1225-1429
AB - Recently the shortage of silicon resources especially for poly-silicon of purity higher than 99.9999 % leads to
search for the more cheap and quick synthesizing routes for silicon feedstock. In order to solve this situation, we
investigated the purification process of metallurgical grade (MG) silicon of purity around 99 % by the acid leaching and
following the unidirectional solidification. MG-Si lumps are pulverized with a planetary mill, and then leached with HCl/
HNO₃/HF acid solution. As a result, the concentration of metal impurities including Al, Fe, Ca, Mn, etc. decreased
dramatically. This process led to silicon content higher than 99.99 %. The purified silicon powders were compacted and
have been melted and uni-directionally solidified with heat exchange method (HEM) furnace. The properties of
multicrystalline silicon ingots were specific resistance of 0.3 Ω·cm and minority carrier life time (MCLT) of 3.8 μ·sec.
KW - Silicon purification;Acid leaching;Uni-directional solidiffication;Solar cell;HEM;SoG-Si
DO -
UR -
ER -
음정현, 장효식, Hyung Tae Kim and Kyoon Choi. (2008). Silicon purification through acid leaching and unidirectional solidification. Journal of the Korean Crystal Growth and Crystal Technology, 18(6), 232-236.
음정현, 장효식, Hyung Tae Kim and Kyoon Choi. 2008, "Silicon purification through acid leaching and unidirectional solidification", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.6 pp.232-236.
음정현, 장효식, Hyung Tae Kim, Kyoon Choi "Silicon purification through acid leaching and unidirectional solidification" Journal of the Korean Crystal Growth and Crystal Technology 18.6 pp.232-236 (2008) : 232.
음정현, 장효식, Hyung Tae Kim, Kyoon Choi. Silicon purification through acid leaching and unidirectional solidification. 2008; 18(6), 232-236.
음정현, 장효식, Hyung Tae Kim and Kyoon Choi. "Silicon purification through acid leaching and unidirectional solidification" Journal of the Korean Crystal Growth and Crystal Technology 18, no.6 (2008) : 232-236.
음정현; 장효식; Hyung Tae Kim; Kyoon Choi. Silicon purification through acid leaching and unidirectional solidification. Journal of the Korean Crystal Growth and Crystal Technology, 18(6), 232-236.
음정현; 장효식; Hyung Tae Kim; Kyoon Choi. Silicon purification through acid leaching and unidirectional solidification. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(6) 232-236.
음정현, 장효식, Hyung Tae Kim, Kyoon Choi. Silicon purification through acid leaching and unidirectional solidification. 2008; 18(6), 232-236.
음정현, 장효식, Hyung Tae Kim and Kyoon Choi. "Silicon purification through acid leaching and unidirectional solidification" Journal of the Korean Crystal Growth and Crystal Technology 18, no.6 (2008) : 232-236.
