@article{ART001319447},
author={한영훈 and Hunsoo Jeon and 홍상현 and Eunju Kim and 이아름 and Kyoung Hwa Kim and Hyung Soo Ahn and Min Yang and T. Tanikawa and Y. Honda and M. Yamaguchi and N. Sawaki},
title={Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2009},
volume={19},
number={1},
pages={1-5}
TY - JOUR
AU - 한영훈
AU - Hunsoo Jeon
AU - 홍상현
AU - Eunju Kim
AU - 이아름
AU - Kyoung Hwa Kim
AU - Hyung Soo Ahn
AU - Min Yang
AU - T. Tanikawa
AU - Y. Honda
AU - M. Yamaguchi
AU - N. Sawaki
TI - Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2009
VL - 19
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 5
SN - 1225-1429
AB - In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-101) GaN facet on 8-degree off oriented stripe patterned (100) Si substrates by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on NH3 flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of NH3 flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the
transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.
KW - Si;non-polar;MOVPE;Metal organic vapor phase epitaxy;GaN;CL;MQW;Multi quantum well
DO -
UR -
ER -
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi and N. Sawaki. (2009). Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE. Journal of the Korean Crystal Growth and Crystal Technology, 19(1), 1-5.
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi and N. Sawaki. 2009, "Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE", Journal of the Korean Crystal Growth and Crystal Technology, vol.19, no.1 pp.1-5.
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki "Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE" Journal of the Korean Crystal Growth and Crystal Technology 19.1 pp.1-5 (2009) : 1.
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki. Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE. 2009; 19(1), 1-5.
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi and N. Sawaki. "Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE" Journal of the Korean Crystal Growth and Crystal Technology 19, no.1 (2009) : 1-5.
한영훈; Hunsoo Jeon; 홍상현; Eunju Kim; 이아름; Kyoung Hwa Kim; Hyung Soo Ahn; Min Yang; T. Tanikawa; Y. Honda; M. Yamaguchi; N. Sawaki. Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE. Journal of the Korean Crystal Growth and Crystal Technology, 19(1), 1-5.
한영훈; Hunsoo Jeon; 홍상현; Eunju Kim; 이아름; Kyoung Hwa Kim; Hyung Soo Ahn; Min Yang; T. Tanikawa; Y. Honda; M. Yamaguchi; N. Sawaki. Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE. Journal of the Korean Crystal Growth and Crystal Technology. 2009; 19(1) 1-5.
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki. Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE. 2009; 19(1), 1-5.
한영훈, Hunsoo Jeon, 홍상현, Eunju Kim, 이아름, Kyoung Hwa Kim, Hyung Soo Ahn, Min Yang, T. Tanikawa, Y. Honda, M. Yamaguchi and N. Sawaki. "Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE" Journal of the Korean Crystal Growth and Crystal Technology 19, no.1 (2009) : 1-5.
