@article{ART001319461},
author={홍상현 and Hunsoo Jeon and 한영훈 and Eunju Kim and 이아름 and Kyoung Hwa Kim and SUNLYEONG HWANG and 하홍주 and Hyung Soo Ahn and Min Yang},
title={Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2009},
volume={19},
number={1},
pages={6-10}
TY - JOUR
AU - 홍상현
AU - Hunsoo Jeon
AU - 한영훈
AU - Eunju Kim
AU - 이아름
AU - Kyoung Hwa Kim
AU - SUNLYEONG HWANG
AU - 하홍주
AU - Hyung Soo Ahn
AU - Min Yang
TI - Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2009
VL - 19
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 6
EP - 10
SN - 1225-1429
AB - In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mgdoped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The lectroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA.
The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.
KW - Hydride vapor phase epitaxy;r-Plane sapphire;a-Plane GaN;Mixed-source;Selective area growth;Double heterostructure;HVPE;LED
DO -
UR -
ER -
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn and Min Yang. (2009). Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology, 19(1), 6-10.
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn and Min Yang. 2009, "Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.19, no.1 pp.6-10.
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn, Min Yang "Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 19.1 pp.6-10 (2009) : 6.
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn, Min Yang. Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate. 2009; 19(1), 6-10.
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn and Min Yang. "Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 19, no.1 (2009) : 6-10.
홍상현; Hunsoo Jeon; 한영훈; Eunju Kim; 이아름; Kyoung Hwa Kim; SUNLYEONG HWANG; 하홍주; Hyung Soo Ahn; Min Yang. Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology, 19(1), 6-10.
홍상현; Hunsoo Jeon; 한영훈; Eunju Kim; 이아름; Kyoung Hwa Kim; SUNLYEONG HWANG; 하홍주; Hyung Soo Ahn; Min Yang. Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2009; 19(1) 6-10.
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn, Min Yang. Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate. 2009; 19(1), 6-10.
홍상현, Hunsoo Jeon, 한영훈, Eunju Kim, 이아름, Kyoung Hwa Kim, SUNLYEONG HWANG, 하홍주, Hyung Soo Ahn and Min Yang. "Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 19, no.1 (2009) : 6-10.
