Control of carrier concentrations by addition of B2O3 in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth (수직경사응고(VGF)법에 의한 Si 도핑 GaAs 단결정 성장시 B2O3 첨가에 따른 캐리어 농도 변화)

배소익; 한창운

Control of carrier concentrations by addition of B2O3 in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2009, 19(2), pp.75-78
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

배소익 ¹, 한창운 ¹

¹(주)포티조

Accredited

ABSTRACT

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer B2O3 in PBN crucible was changed (0~0.2 wt%) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of B2O3 increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and B2O3 in GaAs melt results in the reduction of Si dopants (donor) while increase in the amount of boron (acceptor). The thin layer of B2O3 glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of B2O3.

KEYWORDS

GaAs, Si-doped, PBN, VGF, B2O3, Carrier concentration, Oxidation, Segregation coefficient

Citation status

* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19