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@article{ART001371078},
author={Jun-Seok Ha and 박종성 and Song Ohsung and T.YAO and JIho Chang},
title={GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2009},
volume={19},
number={4},
pages={159-164}

TY - JOUR
AU - Jun-Seok Ha
AU - 박종성
AU - Song Ohsung
AU - T.YAO
AU - JIho Chang
TI - GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2009
VL - 19
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 159
EP - 164
SN - 1225-1429
AB - We fabricated 40 nm-thick cobalt silicide (CoSi2) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on CoSi2/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I (850 o C-12 minutes + 1080 o C-30 minutes) and process II (557 o C-5 minutes + 900 o C-5 minutes) on CoSi2/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ω-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.
KW - GaN;Epitaxy;HVPE;Cobalt silicide;Buffer layer;Silicon substrate
DO -
UR -
ER -

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO and JIho Chang. (2009). GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates. Journal of the Korean Crystal Growth and Crystal Technology, 19(4), 159-164.

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO and JIho Chang. 2009, "GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates", Journal of the Korean Crystal Growth and Crystal Technology, vol.19, no.4 pp.159-164.

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO, JIho Chang "GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates" Journal of the Korean Crystal Growth and Crystal Technology 19.4 pp.159-164 (2009) : 159.

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO, JIho Chang. GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates. 2009; 19(4), 159-164.

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO and JIho Chang. "GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates" Journal of the Korean Crystal Growth and Crystal Technology 19, no.4 (2009) : 159-164.

Jun-Seok Ha; 박종성; Song Ohsung; T.YAO; JIho Chang. GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates. Journal of the Korean Crystal Growth and Crystal Technology, 19(4), 159-164.

Jun-Seok Ha; 박종성; Song Ohsung; T.YAO; JIho Chang. GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates. Journal of the Korean Crystal Growth and Crystal Technology. 2009; 19(4) 159-164.

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO, JIho Chang. GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates. 2009; 19(4), 159-164.

Jun-Seok Ha, 박종성, Song Ohsung, T.YAO and JIho Chang. "GaN epitaxy growth by low temperature HVPE on CoSi2 buffer/Si substrates" Journal of the Korean Crystal Growth and Crystal Technology 19, no.4 (2009) : 159-164.