@article{ART001441020},
author={음정현 and 채정민 and JaeHwan Pee and Sung-Min Lee and Kyoon Choi and 김상진 and 홍태식 and 황충호 and 안학준},
title={Effect of defects on lifetime of silicon electrodes and rings in plasma etcher},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2010},
volume={20},
number={2},
pages={101-105}
TY - JOUR
AU - 음정현
AU - 채정민
AU - JaeHwan Pee
AU - Sung-Min Lee
AU - Kyoon Choi
AU - 김상진
AU - 홍태식
AU - 황충호
AU - 안학준
TI - Effect of defects on lifetime of silicon electrodes and rings in plasma etcher
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2010
VL - 20
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 101
EP - 105
SN - 1225-1429
AB - Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (μ-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.
KW - Persistent slip band (PSB);Silicon ingot;Plasma etcher;Electrode;Minority carrier lifetime
DO -
UR -
ER -
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호 and 안학준. (2010). Effect of defects on lifetime of silicon electrodes and rings in plasma etcher. Journal of the Korean Crystal Growth and Crystal Technology, 20(2), 101-105.
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호 and 안학준. 2010, "Effect of defects on lifetime of silicon electrodes and rings in plasma etcher", Journal of the Korean Crystal Growth and Crystal Technology, vol.20, no.2 pp.101-105.
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호, 안학준 "Effect of defects on lifetime of silicon electrodes and rings in plasma etcher" Journal of the Korean Crystal Growth and Crystal Technology 20.2 pp.101-105 (2010) : 101.
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호, 안학준. Effect of defects on lifetime of silicon electrodes and rings in plasma etcher. 2010; 20(2), 101-105.
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호 and 안학준. "Effect of defects on lifetime of silicon electrodes and rings in plasma etcher" Journal of the Korean Crystal Growth and Crystal Technology 20, no.2 (2010) : 101-105.
음정현; 채정민; JaeHwan Pee; Sung-Min Lee; Kyoon Choi; 김상진; 홍태식; 황충호; 안학준. Effect of defects on lifetime of silicon electrodes and rings in plasma etcher. Journal of the Korean Crystal Growth and Crystal Technology, 20(2), 101-105.
음정현; 채정민; JaeHwan Pee; Sung-Min Lee; Kyoon Choi; 김상진; 홍태식; 황충호; 안학준. Effect of defects on lifetime of silicon electrodes and rings in plasma etcher. Journal of the Korean Crystal Growth and Crystal Technology. 2010; 20(2) 101-105.
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호, 안학준. Effect of defects on lifetime of silicon electrodes and rings in plasma etcher. 2010; 20(2), 101-105.
음정현, 채정민, JaeHwan Pee, Sung-Min Lee, Kyoon Choi, 김상진, 홍태식, 황충호 and 안학준. "Effect of defects on lifetime of silicon electrodes and rings in plasma etcher" Journal of the Korean Crystal Growth and Crystal Technology 20, no.2 (2010) : 101-105.
