New fabrication of CIGS crystals growth by a HVT method (새로운 HVT 성장방법을 이용한 CIGS 결정성장)

GANG SEOK LEE (이강석); Hunsoo Jeon (전헌수); 이아름; Se-Gyo Jung (정세교); Seon Min Bae (배선민); 조동완; 옥진은; Kyoung Hwa Kim (김경화); Min Yang (양민); 이삼녕; Hyung Soo Ahn (안형수); Jong Seong Bae (배종성); Hong Ju Ha (하홍주)

New fabrication of CIGS crystals growth by a HVT method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2010, 20(3), pp.107-112
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

GANG SEOK LEE ¹, Hunsoo Jeon ¹, 이아름 ¹, Se-Gyo Jung ¹, Seon Min Bae ¹, 조동완 ¹, 옥진은 ¹, Kyoung Hwa Kim ¹, Min Yang ¹, 이삼녕 ¹, Hyung Soo Ahn ¹, Jong Seong Bae ², Hong Ju Ha ³

¹한국해양대학교
²한국기초과학지원연구원
³시스솔루션

Accredited

ABSTRACT

The Cu(In1 − xGax)Se2 is the absorber material for thin film solar cell with high absorption coefficient of 1 × 105cm−1. In the case of CIGS, the movable energy band gap from CuInSe2 (1.00 eV) to CuGaSe2 (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT)method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane Al2O3 and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

KEYWORDS

CuInGaSe, CIGS, Crystal, Growth, HVT, Mixed source, Chalcopyrite, Structure

Citation status

* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19