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Effects of antimony addition on growth of InGaN nano-structures by mixed-source HVPE

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2010, 20(3), pp.113-116
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

옥진은 1 조동완 1 Hunsoo Jeon 1 이아름 1 Gang Seok Lee 1 Cho Youngji 1 Kyoung Hwa Kim 1 JIho Chang 1 Hyung Soo Ahn 1 Min Yang 1

1한국해양대학교

Accredited

ABSTRACT

We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained layer heteroepitaxial growth. We performed the growth of the InGaN nano-structures on c-sapphire substrates using mixed-source hydride vapor phase epitaxy (HVPE). The characteristic of samples was measured by scanning electron microscope (SEM) and photoluminescence (PL). The aligning direction of c-axis of the InGaN nanostructures was changed from vertical to parallel or inclined to the surface of substrates when the Sb was added as a catalyst. The indium composition was estimated about 3.2 % in both cases of with or without the addition of Sb in the InxGa1-xN structures. From the results of InGaN nano-structures formed with the addition of Sb, we can expect the performance of optical devices would be more improved by reduced piezo-electric field if we use the InGaN nanostructures of which c-axes are aligned parallel to the substrates as an active layer.

Citation status

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This paper was written with support from the National Research Foundation of Korea.