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Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2011, 21(2), pp.60~64
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김예나 1,  권순우 1,  박승준 2,  김우경 3,  Lee Han Young 3,  YOON, DAEHO 1,  Woo Seok Yang 3

1성균관대학교
2한양대학교
3전자부품연구원

Accredited

ABSTRACT

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR)and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on (SiO2)x-(Ti)y composition were deposited on substrates of germanium and glass by thermal evaporator. The SiO2 : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. (SiO2)x-(Ti)y mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of (SiO2)x-(Ti)y in the range of 273~333 K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain SiO2-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from −1.4 to −2.6 %K−1.

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