@article{ART001546993},
author={김예나 and 권순우 and 박승준 and 김우경 and Lee Han Young and YOON, DAEHO and Woo Seok Yang},
title={Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2011},
volume={21},
number={2},
pages={60-64}
TY - JOUR
AU - 김예나
AU - 권순우
AU - 박승준
AU - 김우경
AU - Lee Han Young
AU - YOON, DAEHO
AU - Woo Seok Yang
TI - Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2011
VL - 21
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 60
EP - 64
SN - 1225-1429
AB - High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR)and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on (SiO2)x-(Ti)y composition were deposited on substrates of germanium and glass by thermal evaporator. The SiO2 : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. (SiO2)x-(Ti)y mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of (SiO2)x-(Ti)y in the range of 273~333 K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain SiO2-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm.
Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from −1.4 to −2.6 %K−1.
KW - (SiO2)x-(Ti)y films;TCR;Resistivity;Thermal evaporator;IR image sensor
DO -
UR -
ER -
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO and Woo Seok Yang. (2011). Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors. Journal of the Korean Crystal Growth and Crystal Technology, 21(2), 60-64.
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO and Woo Seok Yang. 2011, "Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors", Journal of the Korean Crystal Growth and Crystal Technology, vol.21, no.2 pp.60-64.
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO, Woo Seok Yang "Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors" Journal of the Korean Crystal Growth and Crystal Technology 21.2 pp.60-64 (2011) : 60.
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO, Woo Seok Yang. Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors. 2011; 21(2), 60-64.
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO and Woo Seok Yang. "Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors" Journal of the Korean Crystal Growth and Crystal Technology 21, no.2 (2011) : 60-64.
김예나; 권순우; 박승준; 김우경; Lee Han Young; YOON, DAEHO; Woo Seok Yang. Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors. Journal of the Korean Crystal Growth and Crystal Technology, 21(2), 60-64.
김예나; 권순우; 박승준; 김우경; Lee Han Young; YOON, DAEHO; Woo Seok Yang. Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors. Journal of the Korean Crystal Growth and Crystal Technology. 2011; 21(2) 60-64.
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO, Woo Seok Yang. Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors. 2011; 21(2), 60-64.
김예나, 권순우, 박승준, 김우경, Lee Han Young, YOON, DAEHO and Woo Seok Yang. "Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors" Journal of the Korean Crystal Growth and Crystal Technology 21, no.2 (2011) : 60-64.