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Formation of GaN microstructures using metal catalysts on the vertex of GaN pyramids

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2011, 21(3), pp.110-113
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Wi Il Yun 1 조동완 1 옥진은 1 Hunsoo Jeon 1 Gang Seok Lee 1 Se-Gyo Jung 1 Seon Min Bae 1 Hyung Soo Ahn 1 Min Yang 1

1한국해양대학교

Accredited

ABSTRACT

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 μm SiO2 dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from 650oC to 750oC. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

Citation status

* References for papers published after 2023 are currently being built.

This paper was written with support from the National Research Foundation of Korea.