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Fabrication of semi-polar nano- and micro-scale GaN structures on the vertex of hexagonal GaN pyramids by MOVPE

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2011, 21(3), pp.114-118
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

조동완 1 옥진은 1 Wi Il Yun 1 Hunsoo Jeon 1 Gang Seok Lee 1 Se-Gyo Jung 1 Seon Min Bae 1 Hyung Soo Ahn 1 Min Yang 1 이영철 2

1한국해양대학교
2한국생산기술연구원

Accredited

ABSTRACT

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. SiO2 near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM maesurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of SiO2 film because of the roughness and nonuniformity in thickness of the SiO2 film

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