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Characteristics and Deposition of CuInS2 film for thin solar cells via sol-gel method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2011, 21(4), pp.158-163
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

이상현 1 이승엽 1 Park,Byung-Ok 1

1경북대학교

Accredited

ABSTRACT

CuInS2 thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating,simple equipment, easy composition control available. The structural and optical properties of CuInS2 thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate (Cu(CH3COO)2 · H2O)and indium acetate (In(CH3COO)3) were dissolved into 2-propanol and 1-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at 300oC for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of CuInS2was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio = 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032and c = 11.1064 Å, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.

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