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@article{ART001580790},
author={Jong-Chun Park and Hyun Cho},
title={Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2011},
volume={21},
number={4},
pages={164-168}

TY - JOUR
AU - Jong-Chun Park
AU - Hyun Cho
TI - Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2011
VL - 21
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 164
EP - 168
SN - 1225-1429
AB - Etch selectivities of mask materials to ZnO and SnO2 films were studied in BCl3/Ar and CF4/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In 25BCl3/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7~17 for ZnO over Ni were produced in 25CF4/10Ar mixtures. SnO2 showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for SnO2 over Ni.
KW - Etch selectivity;SnO2;ZnO;Mask material;ICP etching;Nano gas sensors
DO -
UR -
ER -

Jong-Chun Park and Hyun Cho. (2011). Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films. Journal of the Korean Crystal Growth and Crystal Technology, 21(4), 164-168.

Jong-Chun Park and Hyun Cho. 2011, "Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films", Journal of the Korean Crystal Growth and Crystal Technology, vol.21, no.4 pp.164-168.

Jong-Chun Park, Hyun Cho "Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films" Journal of the Korean Crystal Growth and Crystal Technology 21.4 pp.164-168 (2011) : 164.

Jong-Chun Park, Hyun Cho. Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films. 2011; 21(4), 164-168.

Jong-Chun Park and Hyun Cho. "Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films" Journal of the Korean Crystal Growth and Crystal Technology 21, no.4 (2011) : 164-168.

Jong-Chun Park; Hyun Cho. Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films. Journal of the Korean Crystal Growth and Crystal Technology, 21(4), 164-168.

Jong-Chun Park; Hyun Cho. Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films. Journal of the Korean Crystal Growth and Crystal Technology. 2011; 21(4) 164-168.

Jong-Chun Park, Hyun Cho. Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films. 2011; 21(4), 164-168.

Jong-Chun Park and Hyun Cho. "Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films" Journal of the Korean Crystal Growth and Crystal Technology 21, no.4 (2011) : 164-168.