Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP) (ICP 표면 처리된 Si 기판 위에 성장된 Ge 층의 초기 성장 상태 연구)

Hyundeok Yang (양현덕); Yeon-Ho Kil (길연호); Shim Kyu Hwan (심규환); 최철종

Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP)

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2011, 21(4), pp.153-157
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Hyundeok Yang ¹, Yeon-Ho Kil ¹, Shim Kyu Hwan ¹, 최철종 ¹

¹전북대학교

Accredited

ABSTRACT

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD). The Si(100)substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition. The ICP treatment led to the enhancement in the coalescence of Ge islands. The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.

KEYWORDS

ICP, SEM, Island, Coalescence, LPCVD, Germanium, Silicon, missing dimer

Citation status

* References for papers published after 2023 are currently being built.

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