Growth of O- and Zn-polar ZnO films by DC magnetron sputtering

유진엽; Sungkuk Choi (최성국); 정수훈; 조용지; Lee Sang Tae (이상태); 길경석; 이현재; Takafumi Yao; Jiho Chang (장지호)

Growth of O- and Zn-polar ZnO films by DC magnetron sputtering

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2012, 22(1), pp.1~4
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

유진엽 ¹, Sungkuk Choi ¹, 정수훈 ¹, 조용지 ¹, Lee Sang Tae ¹, 길경석 ¹, 이현재 ², Takafumi Yao ³, Jiho Chang ¹

¹한국해양대학교
²PAN-Xal Co., Ltd
³Tohoku University

Accredited

ABSTRACT

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an Al2O3 substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/Al2O3 substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

KEYWORDS

ZnO, DC magnetron sputtering, Polarity

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This paper was written with support from the National Research Foundation of Korea.

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