The characteristic of InGaN/GaN MQW LED by different diameter in selective area growth method (선택성장영역 크기에 따른 InGaN/GaN 다중양자우물 청색 MOCVD-발광다이오 드 소자의 특성)

Seon Min Bae (배선민); Hunsoo Jeon (전헌수); Gang Seok Lee (이강석); Se-Gyo Jung (정세교); Wi Il Yun (윤위일); Kyoung Hwa Kim (김경화); Min Yang (양민); 이삼녕; Hyung Soo Ahn (안형수); Suck-Whan Kim (김석환); Young-Moon Yu (유영문); Hong Ju Ha (하홍주)

The characteristic of InGaN/GaN MQW LED by different diameter in selective area growth method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2012, 22(1), pp.5-10
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Seon Min Bae ¹, Hunsoo Jeon ¹, Gang Seok Lee ¹, Se-Gyo Jung ¹, Wi Il Yun ¹, Kyoung Hwa Kim ¹, Min Yang ¹, 이삼녕 ¹, Hyung Soo Ahn ¹, Suck-Whan Kim ², Young-Moon Yu ³, Hong Ju Ha ⁴

¹한국해양대학교
²안동대학교
³부경대학교
⁴시스솔루션

Accredited

ABSTRACT

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 μm. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 μm were 485,480, 450, and 445 nm respectively. The chips of 350, 200 μm diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 μm diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 μm.

KEYWORDS

Selective area growth, InGaN/GaN, Multi quantum well, MOCVD, Band-filling effect, Screening effect

Citation status

* References for papers published after 2023 are currently being built.

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