The properties of AlGaN epi layer grown by HVPE (HVPE에 의해 성장된 AlGaN epi layer의 특성)

Se-Gyo Jung (정세교); Hunsoo Jeon (전헌수); Gang Seok Lee (이강석); Seon Min Bae (배선민); Wi Il Yun (윤위일); Kyoung Hwa Kim (김경화); Sam Nyung Yi (이삼녕); Min Yang (양민); Hyung Soo Ahn (안형수); Suck-Whan Kim (김석환); Young-Moon Yu (유영문); Seong Hak Cheon (천성학); Hong Ju Ha (하홍주)

The properties of AlGaN epi layer grown by HVPE

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2012, 22(1), pp.11~14
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : October 14, 2011
Accepted : December 30, 2011

Se-Gyo Jung ¹, Hunsoo Jeon ¹, Gang Seok Lee ¹, Seon Min Bae ¹, Wi Il Yun ¹, Kyoung Hwa Kim ¹, Sam Nyung Yi ¹, Min Yang ¹, Hyung Soo Ahn ¹, Suck-Whan Kim ², Young-Moon Yu ³, Seong Hak Cheon ⁴, Hong Ju Ha ⁴

¹한국해양대학교
²안동대학교
³부경대학교
⁴시스솔루션

Accredited

ABSTRACT

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and NH3 gas were flowed over the mixed-source and the carrier gas was N2. The temperature of source zone and growth zone was stabled at 900 and 1090oC, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

KEYWORDS

Hydride vapor phase epitaxy (HVPE), AlGaN, Light emitting diode (LED), x-Ray diffraction (XRD), Electro luminescence (EL), Double heterostructure (DH)

Citation status

* References for papers published after 2023 are currently being built.

[journal] Motoaki Iwaya / 2002 / Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN / Journal of Crystal Growth 237 : 951~955

[journal] A.A. Allerman / 2004 / Growth and design of deep-UV (240~290 nm) light emitting diodes using AlGaN alloys / Journal of Crystal Growth 272 : 227~

[journal] I.-S. Seo / 2002 / The role of AlN buffer layer in AlxGa1−.xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0 0 0 1) / Journal of Crystal Growth 241 : 297~

[journal] T. Namazu / 2007 / Characterization of single crystal silicon and electroplated nickel films by uniaxial tensile test with in situ X-ray diffraction measurement / Fatigue Fract. Engng. Mater. Struct 30 : 13~

[journal] A. Krost / 2000 / Nearly strain-free AlGaN on (0 0 0 1) sapphire: X-ray measurements and a new crystallographic growth model / Journal of Crystal Grwoth 221 : 251~

[journal] A. SH. Hussein / 2011 / Effect of Al mole fraction on structural and electrical properties of AlxGa1 −. xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy / Applied Surface Science 257 : 4159~

[journal] H. Ashraf / 2008 / Thick GaN layers grown by HVPE: Influence of the templates / Journal of Crystal Growth 310 : 3957~

[journal] B. L⁄. ucznik / 2005 / Deposition of thickGaN layers by HVPE on the pressure grown GaN substrates / Journal of Crystal Growth 281 : 38~

[journal] Yamina Andre / 2007 / Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers / Journal of Crystal Growth 306 : 86~

[journal] S.T. Kim / 1998 / Preparation and properties of free-standing HVPE grown GaN substrates / Journal of Crystal Growth 194 : 37~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19