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@article{ART001654581},
author={윤원태 and KIM YOUNG KWAN},
title={Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2012},
volume={22},
number={2},
pages={65-72},
doi={10.6111/JKCGCT.2012.22.2.065}

TY - JOUR
AU - 윤원태
AU - KIM YOUNG KWAN
TI - Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2012
VL - 22
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 65
EP - 72
SN - 1225-1429
AB - Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at 520oC was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.
KW - Solar cells;Amorphous silicon;AIC (Aluminum-Induced Crystallization);Aluminum substrate
DO - 10.6111/JKCGCT.2012.22.2.065
ER -

윤원태 and KIM YOUNG KWAN. (2012). Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate. Journal of the Korean Crystal Growth and Crystal Technology, 22(2), 65-72.

윤원태 and KIM YOUNG KWAN. 2012, "Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.22, no.2 pp.65-72. Available from: doi:10.6111/JKCGCT.2012.22.2.065

윤원태, KIM YOUNG KWAN "Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate" Journal of the Korean Crystal Growth and Crystal Technology 22.2 pp.65-72 (2012) : 65.

윤원태, KIM YOUNG KWAN. Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate. 2012; 22(2), 65-72. Available from: doi:10.6111/JKCGCT.2012.22.2.065

윤원태 and KIM YOUNG KWAN. "Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate" Journal of the Korean Crystal Growth and Crystal Technology 22, no.2 (2012) : 65-72.doi: 10.6111/JKCGCT.2012.22.2.065

윤원태; KIM YOUNG KWAN. Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate. Journal of the Korean Crystal Growth and Crystal Technology, 22(2), 65-72. doi: 10.6111/JKCGCT.2012.22.2.065

윤원태; KIM YOUNG KWAN. Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2012; 22(2) 65-72. doi: 10.6111/JKCGCT.2012.22.2.065

윤원태, KIM YOUNG KWAN. Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate. 2012; 22(2), 65-72. Available from: doi:10.6111/JKCGCT.2012.22.2.065

윤원태 and KIM YOUNG KWAN. "Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate" Journal of the Korean Crystal Growth and Crystal Technology 22, no.2 (2012) : 65-72.doi: 10.6111/JKCGCT.2012.22.2.065