CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process (사파이어 단결정의 Kyropoulos 성장시 도가니 형상에 따른 유동장 및 결정성장 거동의 CFD 해석)

Jinho Ryu (류진욱); Wookjin Lee (이욱진); Youngchul Lee (이영철); Hyung Ho Jo (조형호); Yongho Park (박용호)

doi:10.6111/JKCGCT.2012.22.3.115

CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2012, 22(3), pp.115-121
DOI : 10.6111/JKCGCT.2012.22.3.115
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : May 24, 2012
Accepted : June 12, 2012

Jinho Ryu ¹, Wookjin Lee ¹, Youngchul Lee ², Hyung Ho Jo ², Yongho Park ³

¹부산대학교 재료공학과
²한국생산기술연구원
³부산대학교

Accredited

ABSTRACT

Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurate predictions of the thermal fields and melt flow behavior are essential to design and optimize the Kyropoulos crystal growth process. In this study, computational fluid dynamic simulations were performed to examine the effects of the crucible geometry aspect ratio on melt convection during Kyropoulos sapphire crystal growth. The results through the evolution of various growth parameters on the temperature and velocity fields and convexity of the crystallization interface based on finite volume element simulations show that lower aspect ratio of the crucible geometry can be helpful for the quality of sapphire single crystal.

KEYWORDS

Computer simulation, Convection, Radiation, Single crystal growth, Kyropoulos method, Sapphire

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process

ABSTRACT

KEYWORDS

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