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The properties of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar + H2) gas ratios

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2012, 22(3), pp.122-126
  • DOI : 10.6111/JKCGCT.2012.22.3.122
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Jwayeon Kim 1,  한정수 1

1호서대학교

Accredited

ABSTRACT

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200oC and in 2 × 10−2 Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~9.21 × 10−4 Ωcm) was lowest and mobility (~17.8 cm2/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5 %. When the H2/(Ar + H2) gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

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