@article{ART001723616},
author={오동근 and Bonggeun Choi and Sin Young Bang and Suk Hyun Kang and 김소연 and 김새암 and Seong Kuk Lee and 정진현 and Kyounghun Kim and Kwang Bo Shim},
title={Surface morphology variation during wet etching of GaN epilayer grown by HVPE},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2012},
volume={22},
number={6},
pages={261-264},
doi={10.6111/JKCGCT.2012.22.6.261}
TY - JOUR
AU - 오동근
AU - Bonggeun Choi
AU - Sin Young Bang
AU - Suk Hyun Kang
AU - 김소연
AU - 김새암
AU - Seong Kuk Lee
AU - 정진현
AU - Kyounghun Kim
AU - Kwang Bo Shim
TI - Surface morphology variation during wet etching of GaN epilayer grown by HVPE
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2012
VL - 22
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 261
EP - 264
SN - 1225-1429
AB - In this paper, we investigated characteristics of etching induced surface morphology variation by wet etching of GaN epilayer were grown on sapphire (0001) substrate by hydride vapor phase epitaxy (HVPE). As a results of scanning electron microscope (SEM) observation, three types of hexagonal etch pits (Edge, Screw, Mixed) were formed by the GaN epilayer thickness variations. A lot of etch pits, attributed to screw and mixed type TD, were observed at thinner epilayer,leading to high etch pit density. On the other hand, the thickness of GaN epilayer increased with the number of etch pits corresponding to edge and mixed dislocations, which are the majority of TDs are observed.
KW - GaN;HVPE;Etch pit;H3PO4;LED;LD
DO - 10.6111/JKCGCT.2012.22.6.261
ER -
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim and Kwang Bo Shim. (2012). Surface morphology variation during wet etching of GaN epilayer grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 22(6), 261-264.
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim and Kwang Bo Shim. 2012, "Surface morphology variation during wet etching of GaN epilayer grown by HVPE", Journal of the Korean Crystal Growth and Crystal Technology, vol.22, no.6 pp.261-264. Available from: doi:10.6111/JKCGCT.2012.22.6.261
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim, Kwang Bo Shim "Surface morphology variation during wet etching of GaN epilayer grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 22.6 pp.261-264 (2012) : 261.
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim, Kwang Bo Shim. Surface morphology variation during wet etching of GaN epilayer grown by HVPE. 2012; 22(6), 261-264. Available from: doi:10.6111/JKCGCT.2012.22.6.261
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim and Kwang Bo Shim. "Surface morphology variation during wet etching of GaN epilayer grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 22, no.6 (2012) : 261-264.doi: 10.6111/JKCGCT.2012.22.6.261
오동근; Bonggeun Choi; Sin Young Bang; Suk Hyun Kang; 김소연; 김새암; Seong Kuk Lee; 정진현; Kyounghun Kim; Kwang Bo Shim. Surface morphology variation during wet etching of GaN epilayer grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 22(6), 261-264. doi: 10.6111/JKCGCT.2012.22.6.261
오동근; Bonggeun Choi; Sin Young Bang; Suk Hyun Kang; 김소연; 김새암; Seong Kuk Lee; 정진현; Kyounghun Kim; Kwang Bo Shim. Surface morphology variation during wet etching of GaN epilayer grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology. 2012; 22(6) 261-264. doi: 10.6111/JKCGCT.2012.22.6.261
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim, Kwang Bo Shim. Surface morphology variation during wet etching of GaN epilayer grown by HVPE. 2012; 22(6), 261-264. Available from: doi:10.6111/JKCGCT.2012.22.6.261
오동근, Bonggeun Choi, Sin Young Bang, Suk Hyun Kang, 김소연, 김새암, Seong Kuk Lee, 정진현, Kyounghun Kim and Kwang Bo Shim. "Surface morphology variation during wet etching of GaN epilayer grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 22, no.6 (2012) : 261-264.doi: 10.6111/JKCGCT.2012.22.6.261
