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Silicon surface texturing for enhanced nanocrystalline diamond seeding efficiency

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2013, 23(2), pp.86~92
  • DOI : 10.6111/JKCGCT.2013.23.2.86
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Park, Jong cheon ORD ID 1,  정옥근 1,  Sang Yoon Kim 1,  박세진 1,  Young-Hoon Yun ORD ID 2,  Hyun Cho 1

1부산대학교
2동신대학교

Accredited

ABSTRACT

SF6/O2 inductively coupled plasmas were employed to texture Si surface as a pretreatment for nanocrystalline diamond film growth. It was found that the SF6/O2 plasma texturing provided a very wide process window where normalized roughness values in the range of 2~16 could be obtained. Significantly improved nucleation densities of ~6.5 × 1010 cm−2compared to conventional mechanical abrasion were achieved after seeding for the textured Si substrate.

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This paper was written with support from the National Research Foundation of Korea.