@article{ART001778297},
author={Kyoung-Hee Lee},
title={Quality evaluation of diamond wire-sawn gallium-doped silicon wafers},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2013},
volume={23},
number={3},
pages={119-123},
doi={10.6111/JKCGCT.2013.23.3.119}
TY - JOUR
AU - Kyoung-Hee Lee
TI - Quality evaluation of diamond wire-sawn gallium-doped silicon wafers
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2013
VL - 23
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 119
EP - 123
SN - 1225-1429
AB - Most of the world’s solar cells in photovoltaic industry are currently fabricated using crystalline silicon.
Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation.
The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wiresawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.
KW - Silicon;Czochralski;Diamond wire saw;Gallium doping;Quality evaluation
DO - 10.6111/JKCGCT.2013.23.3.119
ER -
Kyoung-Hee Lee. (2013). Quality evaluation of diamond wire-sawn gallium-doped silicon wafers. Journal of the Korean Crystal Growth and Crystal Technology, 23(3), 119-123.
Kyoung-Hee Lee. 2013, "Quality evaluation of diamond wire-sawn gallium-doped silicon wafers", Journal of the Korean Crystal Growth and Crystal Technology, vol.23, no.3 pp.119-123. Available from: doi:10.6111/JKCGCT.2013.23.3.119
Kyoung-Hee Lee "Quality evaluation of diamond wire-sawn gallium-doped silicon wafers" Journal of the Korean Crystal Growth and Crystal Technology 23.3 pp.119-123 (2013) : 119.
Kyoung-Hee Lee. Quality evaluation of diamond wire-sawn gallium-doped silicon wafers. 2013; 23(3), 119-123. Available from: doi:10.6111/JKCGCT.2013.23.3.119
Kyoung-Hee Lee. "Quality evaluation of diamond wire-sawn gallium-doped silicon wafers" Journal of the Korean Crystal Growth and Crystal Technology 23, no.3 (2013) : 119-123.doi: 10.6111/JKCGCT.2013.23.3.119
Kyoung-Hee Lee. Quality evaluation of diamond wire-sawn gallium-doped silicon wafers. Journal of the Korean Crystal Growth and Crystal Technology, 23(3), 119-123. doi: 10.6111/JKCGCT.2013.23.3.119
Kyoung-Hee Lee. Quality evaluation of diamond wire-sawn gallium-doped silicon wafers. Journal of the Korean Crystal Growth and Crystal Technology. 2013; 23(3) 119-123. doi: 10.6111/JKCGCT.2013.23.3.119
Kyoung-Hee Lee. Quality evaluation of diamond wire-sawn gallium-doped silicon wafers. 2013; 23(3), 119-123. Available from: doi:10.6111/JKCGCT.2013.23.3.119
Kyoung-Hee Lee. "Quality evaluation of diamond wire-sawn gallium-doped silicon wafers" Journal of the Korean Crystal Growth and Crystal Technology 23, no.3 (2013) : 119-123.doi: 10.6111/JKCGCT.2013.23.3.119
