2013, Vol.23, No.3

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

pISSN : 1225-1429 / eISSN : 2234-5078
https://journal.kci.go.kr/jkcgct

Most of the world’s solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wiresawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

In this research, cubic zirconia is synthesized with a refined CaO from shells as a stabilizer through Skull melting method. The proper process time and concentration are defined by Hydration reaction to produce the refined CaO after two different treatments using 0.1 mol% of HCl respectively with Cockle shell. The highest purity of CaO is reached when the shell is immersed in 1 mol% HCl. In Hydration reaction step, the pure Ca(OH)2 is produced at 45oC for 24 hours. The highest purity of CaO is measured when the Ca(OH)2 is treated by heat at 1200oC for 5 hours. The single crystals are grown through Skull melting method by adding the different contents of the refined CaO from 10 mol% to 30 mol% into ZrO2. The frequency of High-frequency oscillator used for Skull melting method is 3.4 MHz. The descending speed of the single crystal is 3 mm/hour. The grown length of the single crystal is 4 cm. As a result of this study, 15 mol% of CaO has the best crystallinity

Sapphire wafers are used as an important substrate for the production of blue LED (light emitting diode) and the LED’s performance largely depends on the quality of the sapphire single crystals. There are several crystal growth methods for sapphire crystals and Kyropoulos method is an efficient way to grow large diameter and high-quality sapphire single crystals with low dislocation density. During Kyropoulos growth, the convection of molten melt is largely influenced by the hot zone geometry such as crucible shape, heater and refractory arrangements. In this study, CFD (computational fluid dynamics) simulations were performed according to the bottom/side ratios (per unit of the crucible surface area) of heaters. And, based on the results of analysis, the molten alumina flows and remelting phenomena were analyzed.