@article{ART001778325},
author={김진형 and Yongho Park and Youngchul Lee},
title={Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2013},
volume={23},
number={3},
pages={129-134},
doi={10.6111/JKCGCT.2013.23.3.129}
TY - JOUR
AU - 김진형
AU - Yongho Park
AU - Youngchul Lee
TI - Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2013
VL - 23
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 129
EP - 134
SN - 1225-1429
AB - Sapphire wafers are used as an important substrate for the production of blue LED (light emitting diode) and the LED’s performance largely depends on the quality of the sapphire single crystals. There are several crystal growth methods for sapphire crystals and Kyropoulos method is an efficient way to grow large diameter and high-quality sapphire single crystals with low dislocation density. During Kyropoulos growth, the convection of molten melt is largely influenced by the hot zone geometry such as crucible shape, heater and refractory arrangements. In this study, CFD (computational fluid dynamics) simulations were performed according to the bottom/side ratios (per unit of the crucible surface area) of heaters. And, based on the results of analysis, the molten alumina flows and remelting phenomena were analyzed.
KW - Hot-zone;CFD;Sapphire;Single crystal;Kyropoulos
DO - 10.6111/JKCGCT.2013.23.3.129
ER -
김진형, Yongho Park and Youngchul Lee. (2013). Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth. Journal of the Korean Crystal Growth and Crystal Technology, 23(3), 129-134.
김진형, Yongho Park and Youngchul Lee. 2013, "Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth", Journal of the Korean Crystal Growth and Crystal Technology, vol.23, no.3 pp.129-134. Available from: doi:10.6111/JKCGCT.2013.23.3.129
김진형, Yongho Park, Youngchul Lee "Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth" Journal of the Korean Crystal Growth and Crystal Technology 23.3 pp.129-134 (2013) : 129.
김진형, Yongho Park, Youngchul Lee. Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth. 2013; 23(3), 129-134. Available from: doi:10.6111/JKCGCT.2013.23.3.129
김진형, Yongho Park and Youngchul Lee. "Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth" Journal of the Korean Crystal Growth and Crystal Technology 23, no.3 (2013) : 129-134.doi: 10.6111/JKCGCT.2013.23.3.129
김진형; Yongho Park; Youngchul Lee. Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth. Journal of the Korean Crystal Growth and Crystal Technology, 23(3), 129-134. doi: 10.6111/JKCGCT.2013.23.3.129
김진형; Yongho Park; Youngchul Lee. Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth. Journal of the Korean Crystal Growth and Crystal Technology. 2013; 23(3) 129-134. doi: 10.6111/JKCGCT.2013.23.3.129
김진형, Yongho Park, Youngchul Lee. Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth. 2013; 23(3), 129-134. Available from: doi:10.6111/JKCGCT.2013.23.3.129
김진형, Yongho Park and Youngchul Lee. "Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth" Journal of the Korean Crystal Growth and Crystal Technology 23, no.3 (2013) : 129-134.doi: 10.6111/JKCGCT.2013.23.3.129
