@article{ART001831206},
author={신호용 and 홍수민 and 김종호 and JEONG DAE YONG and Jong In Im},
title={Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2013},
volume={23},
number={6},
pages={265-271},
doi={10.6111/JKCGCT.2013.23.6.265}
TY - JOUR
AU - 신호용
AU - 홍수민
AU - 김종호
AU - JEONG DAE YONG
AU - Jong In Im
TI - Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2013
VL - 23
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 265
EP - 271
SN - 1225-1429
AB - Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal for LED application. In this study, the inductively-heated CZ growth processes for the sapphire crystal of 300 mm length have been analyzed numerically using finite element method. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The results show that the solid-liquid interface height decreased from about 80 mm at initial stage to 40 mm after mid-stage due to achieve the growth speed balance. Also the optimal input power of the modified system was similar with the original one due to the compensation effects of the crucible geometry and additional insulation. The crystal temperature grown by the modified CZ grower was increased about 10 K than the original one. Therefore the sapphire crystal of 300 mm height was grown successfully.
KW - Sapphire;Czochralski;Hot zone structure;Crystal temperature
DO - 10.6111/JKCGCT.2013.23.6.265
ER -
신호용, 홍수민, 김종호, JEONG DAE YONG and Jong In Im. (2013). Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature. Journal of the Korean Crystal Growth and Crystal Technology, 23(6), 265-271.
신호용, 홍수민, 김종호, JEONG DAE YONG and Jong In Im. 2013, "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature", Journal of the Korean Crystal Growth and Crystal Technology, vol.23, no.6 pp.265-271. Available from: doi:10.6111/JKCGCT.2013.23.6.265
신호용, 홍수민, 김종호, JEONG DAE YONG, Jong In Im "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature" Journal of the Korean Crystal Growth and Crystal Technology 23.6 pp.265-271 (2013) : 265.
신호용, 홍수민, 김종호, JEONG DAE YONG, Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature. 2013; 23(6), 265-271. Available from: doi:10.6111/JKCGCT.2013.23.6.265
신호용, 홍수민, 김종호, JEONG DAE YONG and Jong In Im. "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature" Journal of the Korean Crystal Growth and Crystal Technology 23, no.6 (2013) : 265-271.doi: 10.6111/JKCGCT.2013.23.6.265
신호용; 홍수민; 김종호; JEONG DAE YONG; Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature. Journal of the Korean Crystal Growth and Crystal Technology, 23(6), 265-271. doi: 10.6111/JKCGCT.2013.23.6.265
신호용; 홍수민; 김종호; JEONG DAE YONG; Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature. Journal of the Korean Crystal Growth and Crystal Technology. 2013; 23(6) 265-271. doi: 10.6111/JKCGCT.2013.23.6.265
신호용, 홍수민, 김종호, JEONG DAE YONG, Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature. 2013; 23(6), 265-271. Available from: doi:10.6111/JKCGCT.2013.23.6.265
신호용, 홍수민, 김종호, JEONG DAE YONG and Jong In Im. "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature" Journal of the Korean Crystal Growth and Crystal Technology 23, no.6 (2013) : 265-271.doi: 10.6111/JKCGCT.2013.23.6.265
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