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@article{ART001831219},
author={Hoyong Shin and 홍수민 and Jong-Won Yoon and JEONG DAE YONG and Jong In Im},
title={Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2013},
volume={23},
number={6},
pages={272-278},
doi={10.6111/JKCGCT.2013.23.6.272}

TY - JOUR
AU - Hoyong Shin
AU - 홍수민
AU - Jong-Won Yoon
AU - JEONG DAE YONG
AU - Jong In Im
TI - Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2013
VL - 23
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 272
EP - 278
SN - 1225-1429
AB - In this study, a c-axis displacement and an internal stress of the sapphire crystal of 300 mm length have been analyzed numerically and the crystal length having no sub-grain defects have been predicted. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The simulation results show that the c-axis displacement difference between the original hot zone and others originated from the sub-grain defect formations in the sapphire ingot. When the crystal grown by CZ (Czochralski) grower using the modified hot zone,the crystal length having no sub-grain defects was increased about 57 mm maximum than the original one. When the simulation results compared with the experimental one, the predicted crystal length having no sub-grain defects were well corresponded with the experiment one in c-axis wafer of the 300 mm sapphire ingot. Therefore the sapphire crystal of 250 mm length having no sub-grain defects was successfully grown by CZ process.
KW - Sapphire;Czochralski;Hot zone structure;c-Axis displacement;Sub-grain defect
DO - 10.6111/JKCGCT.2013.23.6.272
ER -

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG and Jong In Im. (2013). Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects. Journal of the Korean Crystal Growth and Crystal Technology, 23(6), 272-278.

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG and Jong In Im. 2013, "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects", Journal of the Korean Crystal Growth and Crystal Technology, vol.23, no.6 pp.272-278. Available from: doi:10.6111/JKCGCT.2013.23.6.272

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG, Jong In Im "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects" Journal of the Korean Crystal Growth and Crystal Technology 23.6 pp.272-278 (2013) : 272.

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG, Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects. 2013; 23(6), 272-278. Available from: doi:10.6111/JKCGCT.2013.23.6.272

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG and Jong In Im. "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects" Journal of the Korean Crystal Growth and Crystal Technology 23, no.6 (2013) : 272-278.doi: 10.6111/JKCGCT.2013.23.6.272

Hoyong Shin; 홍수민; Jong-Won Yoon; JEONG DAE YONG; Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects. Journal of the Korean Crystal Growth and Crystal Technology, 23(6), 272-278. doi: 10.6111/JKCGCT.2013.23.6.272

Hoyong Shin; 홍수민; Jong-Won Yoon; JEONG DAE YONG; Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects. Journal of the Korean Crystal Growth and Crystal Technology. 2013; 23(6) 272-278. doi: 10.6111/JKCGCT.2013.23.6.272

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG, Jong In Im. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects. 2013; 23(6), 272-278. Available from: doi:10.6111/JKCGCT.2013.23.6.272

Hoyong Shin, 홍수민, Jong-Won Yoon, JEONG DAE YONG and Jong In Im. "Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects" Journal of the Korean Crystal Growth and Crystal Technology 23, no.6 (2013) : 272-278.doi: 10.6111/JKCGCT.2013.23.6.272