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@article{ART001885269},
author={Myeong-Il Jeong and Choi Chel Jong},
title={Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={3},
pages={106-110},
doi={10.6111/JKCGCT.2014.24.3.106}

TY - JOUR
AU - Myeong-Il Jeong
AU - Choi Chel Jong
TI - Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 106
EP - 110
SN - 1225-1429
AB - The passivation property of Al2O3 thin film formed using atomic layer deposition (ALD) for the application ofcrystalline Si solar cells was investigated using microwave photoconductance decay (μ-PCD). After post-annealing at 400oCfor 5 min, Al2O3 thin film exhibited the structural stability having amorphous nature without the interfacial reaction betweenAl2O3 and Si. The post-annealing at 400oC for 5 min led to an increase in the relative effective lifetime of Al2O3 thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. Thecapacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with Al2O3 thin film post-annealed at400oC for 5 min was carried out to evaluate the negative fixed charge of Al2O3 thin film. From the relationship betweenflatband voltage (VFB) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negativefixed charge of Al2O3 thin film was calculated to be 2.5 × 1012cm−2, of which value was applicable to the passivation layerof n-type crystalline Si solar cells.
KW - Al2O3;Passivation;MOS;EOT;VFB;Negative fixed charge
DO - 10.6111/JKCGCT.2014.24.3.106
ER -

Myeong-Il Jeong and Choi Chel Jong. (2014). Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells. Journal of the Korean Crystal Growth and Crystal Technology, 24(3), 106-110.

Myeong-Il Jeong and Choi Chel Jong. 2014, "Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.3 pp.106-110. Available from: doi:10.6111/JKCGCT.2014.24.3.106

Myeong-Il Jeong, Choi Chel Jong "Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24.3 pp.106-110 (2014) : 106.

Myeong-Il Jeong, Choi Chel Jong. Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells. 2014; 24(3), 106-110. Available from: doi:10.6111/JKCGCT.2014.24.3.106

Myeong-Il Jeong and Choi Chel Jong. "Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24, no.3 (2014) : 106-110.doi: 10.6111/JKCGCT.2014.24.3.106

Myeong-Il Jeong; Choi Chel Jong. Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells. Journal of the Korean Crystal Growth and Crystal Technology, 24(3), 106-110. doi: 10.6111/JKCGCT.2014.24.3.106

Myeong-Il Jeong; Choi Chel Jong. Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(3) 106-110. doi: 10.6111/JKCGCT.2014.24.3.106

Myeong-Il Jeong, Choi Chel Jong. Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells. 2014; 24(3), 106-110. Available from: doi:10.6111/JKCGCT.2014.24.3.106

Myeong-Il Jeong and Choi Chel Jong. "Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24, no.3 (2014) : 106-110.doi: 10.6111/JKCGCT.2014.24.3.106