@article{ART001923240},
author={A-Young Lee and KIM YOUNG KWAN},
title={Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={5},
pages={190-195},
doi={10.6111/JKCGCT.2014.24.5.190}
TY - JOUR
AU - A-Young Lee
AU - KIM YOUNG KWAN
TI - Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 190
EP - 195
SN - 1225-1429
AB - Because of the temperature gradient occurring during the growth of the ingot with directional solidificationmethod, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate duringthe crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects andresidual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries aresmaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, inthe top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the siliconingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot aftersolidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total ThicknessVariation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtainhigh quality silicon ingot with low defect density and low residual stress.
KW - Dislocation;Grain boundary;Twin;Multicrystalline silicon
DO - 10.6111/JKCGCT.2014.24.5.190
ER -
A-Young Lee and KIM YOUNG KWAN. (2014). Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible. Journal of the Korean Crystal Growth and Crystal Technology, 24(5), 190-195.
A-Young Lee and KIM YOUNG KWAN. 2014, "Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.5 pp.190-195. Available from: doi:10.6111/JKCGCT.2014.24.5.190
A-Young Lee, KIM YOUNG KWAN "Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible" Journal of the Korean Crystal Growth and Crystal Technology 24.5 pp.190-195 (2014) : 190.
A-Young Lee, KIM YOUNG KWAN. Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible. 2014; 24(5), 190-195. Available from: doi:10.6111/JKCGCT.2014.24.5.190
A-Young Lee and KIM YOUNG KWAN. "Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible" Journal of the Korean Crystal Growth and Crystal Technology 24, no.5 (2014) : 190-195.doi: 10.6111/JKCGCT.2014.24.5.190
A-Young Lee; KIM YOUNG KWAN. Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible. Journal of the Korean Crystal Growth and Crystal Technology, 24(5), 190-195. doi: 10.6111/JKCGCT.2014.24.5.190
A-Young Lee; KIM YOUNG KWAN. Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(5) 190-195. doi: 10.6111/JKCGCT.2014.24.5.190
A-Young Lee, KIM YOUNG KWAN. Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible. 2014; 24(5), 190-195. Available from: doi:10.6111/JKCGCT.2014.24.5.190
A-Young Lee and KIM YOUNG KWAN. "Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible" Journal of the Korean Crystal Growth and Crystal Technology 24, no.5 (2014) : 190-195.doi: 10.6111/JKCGCT.2014.24.5.190
