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@article{ART001923242},
author={홍윤표 and Jae Hwa Park and Cheol Woo Park and Hyun-Mi Kim and 오동근 and Bonggeun Choi and Seong Kuk Lee and Kwang Bo Shim},
title={Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={5},
pages={196-201},
doi={10.6111/JKCGCT.2014.24.5.196}

TY - JOUR
AU - 홍윤표
AU - Jae Hwa Park
AU - Cheol Woo Park
AU - Hyun-Mi Kim
AU - 오동근
AU - Bonggeun Choi
AU - Seong Kuk Lee
AU - Kwang Bo Shim
TI - Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 196
EP - 201
SN - 1225-1429
AB - We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, theeffectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy havebeen successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutecticalloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) andatomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function ofetching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metalfaceof AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend tomerge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It wasfound that hydroxide ion (OH−) and the dangling bond of nitrogen play an important role in the selective etching of themetal-face and N-face.
KW - KOH/NaOH;Etching;AlN;GaN;Wet etching;Etch pit;Etch rate
DO - 10.6111/JKCGCT.2014.24.5.196
ER -

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee and Kwang Bo Shim. (2014). Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique. Journal of the Korean Crystal Growth and Crystal Technology, 24(5), 196-201.

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee and Kwang Bo Shim. 2014, "Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.5 pp.196-201. Available from: doi:10.6111/JKCGCT.2014.24.5.196

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee, Kwang Bo Shim "Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique" Journal of the Korean Crystal Growth and Crystal Technology 24.5 pp.196-201 (2014) : 196.

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee, Kwang Bo Shim. Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique. 2014; 24(5), 196-201. Available from: doi:10.6111/JKCGCT.2014.24.5.196

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee and Kwang Bo Shim. "Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique" Journal of the Korean Crystal Growth and Crystal Technology 24, no.5 (2014) : 196-201.doi: 10.6111/JKCGCT.2014.24.5.196

홍윤표; Jae Hwa Park; Cheol Woo Park; Hyun-Mi Kim; 오동근; Bonggeun Choi; Seong Kuk Lee; Kwang Bo Shim. Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique. Journal of the Korean Crystal Growth and Crystal Technology, 24(5), 196-201. doi: 10.6111/JKCGCT.2014.24.5.196

홍윤표; Jae Hwa Park; Cheol Woo Park; Hyun-Mi Kim; 오동근; Bonggeun Choi; Seong Kuk Lee; Kwang Bo Shim. Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(5) 196-201. doi: 10.6111/JKCGCT.2014.24.5.196

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee, Kwang Bo Shim. Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique. 2014; 24(5), 196-201. Available from: doi:10.6111/JKCGCT.2014.24.5.196

홍윤표, Jae Hwa Park, Cheol Woo Park, Hyun-Mi Kim, 오동근, Bonggeun Choi, Seong Kuk Lee and Kwang Bo Shim. "Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique" Journal of the Korean Crystal Growth and Crystal Technology 24, no.5 (2014) : 196-201.doi: 10.6111/JKCGCT.2014.24.5.196